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Referenced by

cited by 298

• Systems and methods for a hydrogen zero emissions vehicle from the source record

  Cited by the examiner during prosecution

• Continuously variable resistor from the source record

  Cited by the applicant

• Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication from the source record

  Cited by the applicant

• Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication from the source record

  Cited by the applicant

• Resistance variable memory element with threshold device and method of forming the same from the source record

  Cited by the examiner during prosecution

• Resistance variable memory element with threshold device and method of forming the same from the source record

  Cited by the applicant

• Resistance variable memory element with threshold device and method of forming the same from the source record

  Cited by the applicant

• Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance from the source record

  Cited by the applicant

• Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance from the source record

  Cited by the applicant

• Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance from the source record

  Cited by the applicant

• Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance from the source record

  Cited by the examiner during prosecution

• Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance from the source record

  Cited by the applicant

• Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance from the source record

  Cited by the applicant

• Chalcogenide-based electrokinetic memory element and method of forming the same from the source record

  Cited by the applicant

• Access transistor for memory device from the source record

  Cited by the examiner during prosecution

• Access transistor for memory device from the source record

  Cited by the applicant

• Access transistor for memory device from the source record

  Cited by the applicant

• Access transistor for memory device from the source record

  Cited by the applicant

• Method and apparatus for providing color changing thin film material from the source record

  Cited by the applicant

• Phase change memory cell and method of formation from the source record

  Cited by the applicant

• Phase change memory cell and method of formation from the source record

  Cited by the examiner during prosecution

• Phase change memory cell and method of formation from the source record

  Cited by the applicant

• Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication from the source record

  Cited by the applicant

• Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication from the source record

  Cited by the applicant

• Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication from the source record

  Cited by the examiner during prosecution

• Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication from the source record

  Cited by the applicant

• Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication from the source record

  Cited by the examiner during prosecution

• Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication from the source record

  Cited by the applicant

• Process for erasing chalcogenide variable resistance memory bits from the source record

  Cited by the examiner during prosecution

• Process for erasing chalcogenide variable resistance memory bits from the source record

  Cited by the applicant

• Process for erasing chalcogenide variable resistance memory bits from the source record

  Cited by the applicant

• Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory from the source record

  Cited by the applicant

• Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory from the source record

  Cited by the applicant

• Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory from the source record

  Cited by the applicant

• Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory from the source record

  Cited by the examiner during prosecution

• Method for measuring remaining hydrogen capacity of hydrogen storage canister from the source record

  Cited by the examiner during prosecution

• Memory array for increased bit density from the source record

  Cited by the applicant

• Memory array for increased bit density and method of forming the same from the source record

  Cited by the applicant

• Methods of forming memory arrays for increased bit density from the source record

  Cited by the applicant

• Memory elements having patterned electrodes and method of forming the same from the source record

  Cited by the applicant

• Memory array for increased bit density and method of forming the same from the source record

  Cited by the examiner during prosecution

• Memory elements having patterned electrodes and method of forming the same from the source record

  Cited by the applicant

• SnSe-based limited reprogrammable cell from the source record

  Cited by the applicant

• Small electrode for resistance variable devices from the source record

  Cited by the applicant

• Small electrode for resistance variable devices from the source record

  Cited by the applicant

• Small electrode for resistance variable devices from the source record

  Cited by the examiner during prosecution

• Sensing of resistance variable memory devices from the source record

  Cited by the applicant

• Sensing of resistance variable memory devices from the source record

  Cited by the examiner during prosecution

• Sensing of resistance variable memory devices from the source record

  Cited by the applicant

• Resistance variable memory with temperature tolerant materials from the source record

  Cited by the applicant

• Method of forming a memory device incorporating a resistance-variable chalcogenide element from the source record

  Cited by the applicant

• Resistance variable memory with temperature tolerant materials from the source record

  Cited by the examiner during prosecution

• Method of forming a memory device incorporating a resistance variable chalcogenide element from the source record

  Cited by the applicant

• Method of forming a memory device incorporating a resistance variable chalcogenide element from the source record

  Cited by the applicant

• PCRAM device with switching glass layer from the source record

  Cited by the examiner during prosecution

• Resistance variable memory with temperature tolerant materials from the source record

  Cited by the applicant

• Resistance variable memory with temperature tolerant materials from the source record

  Cited by the applicant

• Resistance variable memory with temperature tolerant materials from the source record

  Cited by the examiner during prosecution

• Resistance variable memory with temperature tolerant materials from the source record

  Cited by the applicant

• Method of forming a PCRAM device incorporating a resistance-variable chalocogenide element from the source record

  Cited by the applicant

• Resistance variable memory with temperature tolerant materials from the source record

  Cited by the applicant

• Memory device incorporating a resistance variable chalcogenide element from the source record

  Cited by the applicant

• PCRAM device with switching glass layer from the source record

  Cited by the applicant

• PCRAM device with switching glass layer from the source record

  Cited by the examiner during prosecution

• Resistance variable memory device and method of fabrication from the source record

  Cited by the applicant

• PCRAM device with switching glass layer from the source record

  Cited by the applicant

• Resistance variable memory device and method of fabrication from the source record

  Cited by the examiner during prosecution

• Resistance variable memory device and method of fabrication from the source record

  Cited by the applicant

• Method of forming a variable resistance memory device comprising tin selenide from the source record

  Cited by the applicant

• Memory device with switching glass layer from the source record

  Cited by the applicant

• Resistance variable memory device and method of fabrication from the source record

  Cited by the examiner during prosecution

• Resistance variable memory device and method of fabrication from the source record

  Cited by the applicant

• Method of forming a chalcogenide material containing device from the source record

  Cited by the applicant

• Method of forming a chalcogenide material containing device from the source record

  Cited by the examiner during prosecution

• Power management control and controlling memory refresh operations from the source record

  Cited by the applicant

• Power management control and controlling memory refresh operations from the source record

  Cited by the applicant

• Power management control and controlling memory refresh operations from the source record

  Cited by the examiner during prosecution

• Method of forming a chalcogenide material containing device from the source record

  Cited by the applicant

• Power management control and controlling memory refresh operations from the source record

  Cited by the applicant

• Non-volatile zero field splitting resonance memory from the source record

  Cited by the applicant

• Resistance variable memory elements based on polarized silver-selenide network growth from the source record

  Cited by the examiner during prosecution

• Resistance variable memory elements based on polarized silver-selenide network growth from the source record

  Cited by the applicant

• Non-volatile memory structure from the source record

  Cited by the applicant

• Non-volatile memory structure from the source record

  Cited by the examiner during prosecution

• Non-volatile memory structure from the source record

  Cited by the examiner during prosecution

• Non-volatile memory structure from the source record

  Cited by the applicant

• Non-volatile memory structure from the source record

  Cited by the applicant

• Non-volatile memory structure from the source record

  Cited by the applicant

• Storage container associated with a thermal energy management system from the source record

  Cited by the applicant

• Hydrogen storage container from the source record

  Cited by the examiner during prosecution

• Resistance variable memory elements and methods of formation from the source record

  Cited by the applicant

• Method of refreshing a PCRAM memory device from the source record

  Cited by the applicant

• Memory device and methods of controlling resistance variation and resistance profile drift from the source record

  Cited by the applicant

• Differential negative resistance memory from the source record

  Cited by the examiner during prosecution

• Differential negative resistance memory from the source record

  Cited by the applicant

• Differential negative resistance memory from the source record

  Cited by the applicant

• Differential negative resistance memory from the source record

  Cited by the applicant

• Method for filling via with metal from the source record

  Cited by the applicant

• Memory element and its method of formation from the source record

  Cited by the applicant

• Software refreshed memory device and method from the source record

  Cited by the applicant

• Method of forming a resistance variable memory element from the source record

  Cited by the applicant

• Software refreshed memory device and method from the source record

  Cited by the applicant

• Software refreshed memory device and method from the source record

  Cited by the applicant

• Forming a memory device using sputtering to deposit silver-selenide film from the source record

  Cited by the applicant

• Software refreshed memory device and method from the source record

  Cited by the examiner during prosecution

• Silver selenide film stoichiometry and morphology control in sputter deposition from the source record

  Cited by the applicant

• Memory element and its method of formation from the source record

  Cited by the examiner during prosecution

• Software refreshed memory device and method from the source record

  Cited by the examiner during prosecution

• Methods to form a memory cell with metal-rich metal chalcogenide from the source record

  Cited by the applicant

• Single-polarity programmable resistance-variable memory element from the source record

  Cited by the applicant

• Silver selenide film stoichiometry and morphology control in sputter deposition from the source record

  Cited by the applicant

• Software refreshed memory device and method from the source record

  Cited by the examiner during prosecution

• Software refreshed memory device and method from the source record

  Cited by the examiner during prosecution

• Methods for forming chalcogenide glass-based memory elements from the source record

  Cited by the applicant

• Software refreshed memory device and method from the source record

  Cited by the applicant

• Graded GexSe100-x concentration in PCRAM from the source record

  Cited by the applicant

• Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes from the source record

  Cited by the applicant

• Fabrication of single polarity programmable resistance structure from the source record

  Cited by the applicant

• Method to control silver concentration in a resistance variable memory element from the source record

  Cited by the applicant

• Graded GexSe100-x concentration in PCRAM from the source record

  Cited by the applicant

• Silver selenide film stoichiometry and morphology control in sputter deposition from the source record

  Cited by the examiner during prosecution

• Graded GexSe100-x concentration in PCRAM from the source record

  Cited by the examiner during prosecution

• Resistance variable memory element and its method of formation from the source record

  Cited by the applicant

• Silver selenide film stoichiometry and morphology control in sputter deposition from the source record

  Cited by the examiner during prosecution

• Methods to form a memory cell with metal-rich metal chalcogenide from the source record

  Cited by the applicant

• Method of manufacture of a PCRAM memory cell from the source record

  Cited by the examiner during prosecution

• Method of manufacture of a PCRAM memory cell from the source record

  Cited by the applicant

• Method of manufacture of a resistance variable memory cell from the source record

  Cited by the applicant

• Method of manufacture of a PCRAM memory cell from the source record

  Cited by the examiner during prosecution

• Method of manufacture of a PCRAM memory cell from the source record

  Cited by the applicant

• Columnar 1T-N memory cell structure from the source record

  Cited by the applicant

• 1T-nmemory cell structure and its method of formation and operation from the source record

  Cited by the examiner during prosecution

• Assemblies displaying differential negative resistance from the source record

  Cited by the applicant

• Assemblies displaying differential negative resistance from the source record

  Cited by the examiner during prosecution

• Assemblies displaying differential negative resistance, semiconductor constructions, and methods of forming assemblies displaying differential negative resistance from the source record

  Cited by the applicant

• Assemblies displaying differential negative resistance, semiconductor constructions, and methods of forming assemblies displaying differential negative resistance from the source record

  Cited by the examiner during prosecution

• Co-sputter deposition of metal-doped chalcogenides from the source record

  Cited by the applicant

• Co-sputter deposition of metal-doped chalcogenides from the source record

  Cited by the examiner during prosecution

• Co-sputter deposition of metal-doped chalcogenides from the source record

  Cited by the applicant

• Co-sputter deposition of metal-doped chalcogenides from the source record

  Cited by the applicant

• Elimination of dendrite formation during metal/chalcogenide glass deposition from the source record

  Cited by the applicant

• Co-sputter deposition of metal-doped chalcogenides from the source record

  Cited by the applicant

• Elimination of dendrite formation during metal/chalcogenide glass deposition from the source record

  Cited by the applicant

• Method of manufacture of programmable conductor memory from the source record

  Cited by the examiner during prosecution

• Thin film diode integrated with chalcogenide memory cell from the source record

  Cited by the examiner during prosecution

• Thin film diode integrated with chalcogenide memory cell from the source record

  Cited by the examiner during prosecution

• Method of manufacture of programmable conductor memory from the source record

  Cited by the applicant

• Thin film diode integrated with chalcogenide memory cell from the source record

  Cited by the applicant

• Thin film diode integrated with chalcogenide memory cell from the source record

  Cited by the applicant

• Method of manufacture of programmable switching circuits and memory cells employing a glass layer from the source record

  Cited by the applicant

• Programmable conductor memory cell structure from the source record

  Cited by the applicant

• Programmable conductor memory cell structure and method therefor from the source record

  Cited by the applicant

• Methods and apparatus for resistance variable material cells from the source record

  Cited by the applicant

• Variable resistance memory and method for sensing same from the source record

  Cited by the applicant

• Method of forming and storing data in a multiple state memory cell from the source record

  Cited by the applicant

• Multiple data state memory cell from the source record

  Cited by the applicant

• Layered resistance variable memory device and method of fabrication from the source record

  Cited by the applicant

• Layered resistance variable memory device and method of fabrication from the source record

  Cited by the examiner during prosecution

• Multiple data state memory cell from the source record

  Cited by the applicant

• Resistance variable ‘on ’ memory from the source record

  Cited by the applicant

• Layered resistance variable memory device and method of fabrication from the source record

  Cited by the applicant

• Layered resistance variable memory device and method of fabrication from the source record

  Cited by the applicant

• Multiple data state memory cell from the source record

  Cited by the examiner during prosecution

• Multiple data state memory cell from the source record

  Cited by the examiner during prosecution

• Multiple data state memory cell from the source record

  Cited by the examiner during prosecution

• Programmable conductor random access memory and method for sensing same from the source record

  Cited by the examiner during prosecution

• Method and apparatus for sensing resistive memory state from the source record

  Cited by the applicant

• Programmable conductor random access memory and method for sensing same from the source record

  Cited by the applicant

• Method to alter chalcogenide glass for improved switching characteristics from the source record

  Cited by the applicant

• Resistance variable memory element having chalcogenide glass for improved switching characteristics from the source record

  Cited by the examiner during prosecution

• Methods of forming non-volatile resistance variable devices and methods of forming silver selenide comprising structures from the source record

  Cited by the applicant

• Rewrite prevention in a variable resistance memory from the source record

  Cited by the applicant

• PCRAM rewrite prevention from the source record

  Cited by the applicant

• Rewrite prevention in a variable resistance memory from the source record

  Cited by the examiner during prosecution

• PCRAM rewrite prevention from the source record

  Cited by the examiner during prosecution

• PCRAM rewrite prevention from the source record

  Cited by the applicant

• Programmable conductor random access memory and a method for writing thereto from the source record

  Cited by the applicant

• Method of operating a complementary bit resistance memory sensor from the source record

  Cited by the applicant

• Method of operating a complementary bit resistance memory sensor and method of operation from the source record

  Cited by the examiner during prosecution

• Complementary bit resistance memory sensor and method of operation from the source record

  Cited by the applicant

• Complementary bit PCRAM sense amplifier and method of operation from the source record

  Cited by the applicant

• Method of operating a complementary bit resistance memory sensor from the source record

  Cited by the examiner during prosecution

• Method of operating a complementary bit resistance memory sensor and method of operation from the source record

  Cited by the applicant

• Electrode structure for use in an integrated circuit from the source record

  Cited by the examiner during prosecution

• Electrode structure for use in an integrated circuit from the source record

  Cited by the examiner during prosecution

• Electrode structure for use in an integrated circuit from the source record

  Cited by the applicant

• Electrode structure for use in an integrated circuit from the source record

  Cited by the examiner during prosecution

• Method of fabricating an electrode structure for use in an integrated circuit from the source record

  Cited by the applicant

• Method of forming electrode structure for use in an integrated circuit from the source record

  Cited by the applicant

• Electrode structure for use in an integrated circuit from the source record

  Cited by the applicant

• Stoichiometry for chalcogenide glasses useful for memory devices and method of formation from the source record

  Cited by the applicant

• Method of forming non-volatile resistance variable devices from the source record

  Cited by the examiner during prosecution

• Method of forming resistance variable devices from the source record

  Cited by the applicant

• Method of forming non-volatile resistance variable devices from the source record

  Cited by the examiner during prosecution

• Resistance variable memory devices with passivating material from the source record

  Cited by the applicant

• Method of forming chalcogenide comprising devices from the source record

  Cited by the applicant

• Method of forming non-volatile resistance variable devices and method of forming a programmable memory cell of memory circuitry from the source record

  Cited by the applicant

• Method of forming integrated circuitry, method of forming memory circuitry, and method of forming random access memory circuitry from the source record

  Cited by the applicant

• Method of making a memory cell from the source record

  Cited by the applicant

• Method of making a memory cell from the source record

  Cited by the examiner during prosecution

• Resistance variable memory cells from the source record

  Cited by the applicant

• PCRAM memory cell and method of making same from the source record

  Cited by the applicant

• Resistance variable memory cells from the source record

  Cited by the examiner during prosecution

• Agglomeration elimination for metal sputter deposition of chalcogenides from the source record

  Cited by the applicant

• Agglomeration elimination for metal sputter deposition of chalcogenides from the source record

  Cited by the applicant

• Agglomeration elimination for metal sputter deposition of chalcogenides from the source record

  Cited by the applicant

• Agglomeration elimination for metal sputter deposition of chalcogenides from the source record

  Cited by the examiner during prosecution

• Agglomeration elimination for metal sputter deposition of chalcogenides from the source record

  Cited by the examiner during prosecution

• Agglomeration elimination for metal sputter deposition of chalcogenides from the source record

  Cited by the applicant

• Methods of forming a semiconductor memory device from the source record

  Cited by the applicant

• Memory device, programmable resistance memory cell and memory array from the source record

  Cited by the applicant

• Method of forming a non-volatile resistance variable device from the source record

  Cited by the applicant

• Non-volatile resistance variable device from the source record

  Cited by the examiner during prosecution

• Resistance variable device from the source record

  Cited by the applicant

• Systems and methods for a hydrogen zero emissions vehicle from the source record

  Cited by the examiner during prosecution

• Hybrid propulsion system, how to protect the pistons of a hydrogen engine from the effects of explosive combustion and how to apply additional periodic torque on the impeller shaft of a hydrogen engine powered helicopter from the source record

  Cited by the examiner during prosecution

• Leak detection in a hydrogen fuelled vehicle from the source record

  Cited by the examiner during prosecution

• Hydrogen engine and method for producing hydrogen fuel for powering the same from the source record

  Cited by the examiner during prosecution

• Continuously variable resistor from the source record

  Cited by the examiner during prosecution

• Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication from the source record

  Cited by the examiner during prosecution

• SnSe-based limited reprogrammable cell from the source record

  Cited by the applicant

• Method of forming a memory cell from the source record

  Cited by the applicant

• Method and apparatus for accessing a memory array from the source record

  Cited by the applicant

• Chalcogenide-based electrokinetic memory element and method of forming the same from the source record

  Cited by the examiner during prosecution

• Memory elements having patterned electrodes and method of forming the same from the source record

  Cited by the examiner during prosecution

• Resistance variable memory element with threshold device and method of forming the same from the source record

  Cited by the examiner during prosecution

• Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance from the source record

  Cited by the examiner during prosecution

• Access transistor for memory device from the source record

  Cited by the examiner during prosecution

• Memory cell contact using spacers from the source record

  Cited by the examiner during prosecution

• Method and apparatus for providing color changing thin film material from the source record

  Cited by the examiner during prosecution

• Phase change memory cell and method of formation from the source record

  Cited by the examiner during prosecution

• Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication from the source record

  Cited by the examiner during prosecution

• Process for erasing chalcogenide variable resistance memory bits from the source record

  Cited by the examiner during prosecution

• Layered resistance variable memory device and method of fabrication from the source record

  Cited by the examiner during prosecution

• Method of forming non-volatile resistance variable devices and method of forming a programmable memory cell of memory circuitry from the source record

  Cited by the examiner during prosecution

• Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory from the source record

  Cited by the examiner during prosecution

• Method for measuring remaining hydrogen capacity of hydrogen storage canister from the source record

  Cited by the applicant

• Memory array for increased bit density and method of forming the same from the source record

  Cited by the examiner during prosecution

• Resistance variable devices with controllable channels from the source record

  Cited by the examiner during prosecution

• Small electrode for resistance variable devices from the source record

  Cited by the examiner during prosecution

• Software refreshed memory device and method from the source record

  Cited by the applicant

• Sensing of resistance variable memory devices from the source record

  Cited by the examiner during prosecution

• PCRAM device with switching glass layer from the source record

  Cited by the examiner during prosecution

• Resistance variable memory with temperature tolerant materials from the source record

  Cited by the examiner during prosecution

• Non-volatile resistance variable devices from the source record

  Cited by the applicant

• PCRAM device with switching glass layer from the source record

  Cited by the examiner during prosecution

• Resistance variable memory device and method of fabrication from the source record

  Cited by the examiner during prosecution

• Storage container associated with a thermal energy management system from the source record

  Cited by the examiner during prosecution

• Method of refreshing a PCRAM memory device from the source record

  Cited by the applicant

• Method of forming a chalcogenide material containing device from the source record

  Cited by the examiner during prosecution

• Power management control and controlling memory refresh operations from the source record

  Cited by the examiner during prosecution

• Non-volatile zero field splitting resonance memory from the source record

  Cited by the examiner during prosecution

• Columnar 1T-nMemory cell structure and its method of formation and operation from the source record

  Cited by the examiner during prosecution

• Resistance variable memory elements based on polarized silver-selenide network growth from the source record

  Cited by the examiner during prosecution

• Apparatus and method for dual cell common electrode PCRAM memory device from the source record

  Cited by the applicant

• Non-volatile memory structure from the source record

  Cited by the examiner during prosecution

• Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes from the source record

  Cited by the examiner during prosecution

• Integrated circuit device and fabrication using metal-doped chalcogenide materials from the source record

  Cited by the examiner during prosecution

• Storage container for gaseous fuels from the source record

  Cited by the examiner during prosecution

• Performance PCRAM cell from the source record

  Cited by the examiner during prosecution

• Complementary bit resistance memory sensor and method of operation from the source record

  Cited by the examiner during prosecution

• PCRAM cell operation method to control on/off resistance variation from the source record

  Cited by the examiner during prosecution

• Non-volatile resistance variable device from the source record

  Cited by the applicant

• Co-sputter deposition of metal-doped chalcogenides from the source record

  Cited by the examiner during prosecution

• Chalcogenide glass constant current device, and its method of fabrication and operation from the source record

  Cited by the applicant

• Method and apparatus for controlling metal doping of a chalcogenide memory element from the source record

  Cited by the examiner during prosecution

• Multiple data state memory cell from the source record

  Cited by the applicant

• Differential negative resistance memory from the source record

  Cited by the examiner during prosecution

• Layered resistance variable memory device and method of fabrication from the source record

  Cited by the examiner during prosecution

• Method for filling via with metal from the source record

  Cited by the examiner during prosecution

• Single polarity programming of a PCRAM structure from the source record

  Cited by the examiner during prosecution

• Method of forming a non-volatile resistance variable device, and non-volatile resistance variable device from the source record

  Cited by the examiner during prosecution

• Methods to form a memory cell with metal-rich metal chalcogenide from the source record

  Cited by the examiner during prosecution

• Ink jet record head from the source record

  Cited by the examiner during prosecution

• Graded GexSe100-x concentration in PCRAM from the source record

  Cited by the examiner during prosecution

• Silver selenide film stoichiometry and morphology control in sputter deposition from the source record

  Cited by the examiner during prosecution

• Method to control silver concentration in a resistance variable memory element from the source record

  Cited by the examiner during prosecution

• Elimination of dendrite formation during metal/chalcogenide glass deposition from the source record

  Cited by the examiner during prosecution

• Method of manufacture of a PCRAM memory cell from the source record

  Cited by the examiner during prosecution

• Methods of forming non-volatile resistance variable devices and methods of forming silver selenide comprising structures from the source record

  Cited by the examiner during prosecution

• Stoichiometry for chalcogenide glasses useful for memory devices and method of formation from the source record

  Cited by the examiner during prosecution

• Assemblies displaying differential negative resistance from the source record

  Cited by the examiner during prosecution

• Thin film diode integrated with chalcogenide memory cell from the source record

  Cited by the examiner during prosecution

• Method of manufacture of programmable conductor memory from the source record

  Cited by the examiner during prosecution

• Programmable conductor memory cell structure and method therefor from the source record

  Cited by the examiner during prosecution

• Methods and apparatus for resistance variable material cells from the source record

  Cited by the examiner during prosecution

• Programmable conductor random access memory and method for sensing same from the source record

  Cited by the examiner during prosecution

• Method to alter chalcogenide glass for improved switching characteristics from the source record

  Cited by the examiner during prosecution

• Programmable conductor random access memory and method for sensing same from the source record

  Cited by the examiner during prosecution

• Resistance variable 'on' memory from the source record

  Cited by the examiner during prosecution

• PCRAM rewrite prevention from the source record

  Cited by the examiner during prosecution

• Programmable conductor random access memory and a method for writing thereto from the source record

  Cited by the examiner during prosecution

• Electrode structure for use in an integrated circuit from the source record

  Cited by the examiner during prosecution

• Agglomeration elimination for metal sputter deposition of chalcogenides from the source record

  Cited by the examiner during prosecution

• Method of forming chalcogenide comprising devices from the source record

  Cited by the examiner during prosecution

• Method of forming integrated circuitry, method of forming memory circuitry, and method of forming random access memory circuitry from the source record

  Cited by the examiner during prosecution

• PCRAM memory cell and method of making same from the source record

  Cited by the examiner during prosecution

• Method of forming soot preform from the source record

  Cited by the examiner during prosecution

References

cites 9

• Systems and method for storing hydrogen from the source record
• Method for cylinder identification in an internal combustion engine when idling from the source record
• Air-liquid cooled engine from the source record
• Hydride storage for hydrogen from the source record
• Gaseous fuel and air proportioning device from the source record
• Ignition timing control from the source record
• Hydrogen fuel supply system from the source record
• Hydrogen Gas Fuel And Management System For An Internal Combustion Engine Utilizing Hydrogen Gas Fuel from the source record
• A Hydrogen Gas Fuel And Management System For An Internal Combustion Engine Utilizing Hydrogen Gas Fuel from the source record

  Cited by the examiner during prosecution

discusses 1

• Ignition Coil found in the text

  “Uses engine cylinder, ignition coil, internal combustion engine.”