patent · US7289349B2
Resistance variable memory element with threshold device and method of forming the same
30 October 2007
Indexed reference — no copy held
This patent is cited by material in the archive, so it is indexed here by number, title and inventor. The archive holds no copy of its text.
Provenance
- Collection
- Patents citing this work
- Patent office record
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- Source
- Google Patents citing-documents table
- Assignee
- Micron Technology, Inc.
- Published
- 2007-10-30