patent · US8895401B2
Method of forming a memory device incorporating a resistance variable chalcogenide element
25 November 2014
Indexed reference — no copy held
This patent is cited by material in the archive, so it is indexed here by number, title and inventor. The archive holds no copy of its text.
Provenance
- Collection
- Patents citing this work
- Patent office record
- patents.google.com →
- Source
- Google Patents citing-documents table
- Assignee
- Micron Technology, Inc.
- Published
- 2014-11-25