patent · US7056762B2
Methods to form a memory cell with metal-rich metal chalcogenide
6 June 2006
Indexed reference — no copy held
This patent is cited by material in the archive, so it is indexed here by number, title and inventor. The archive holds no copy of its text.
Provenance
- Collection
- Patents citing this work
- Patent office record
- patents.google.com →
- Source
- Google Patents citing-documents table
- Assignee
- Micron Technology, Inc.
- Published
- 2006-06-06