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Referenced by
cited by 122
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Optical memory devices using a silicon wire grid polarizer and methods of making and using from the source record
Cited by the applicant
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Optical memory devices using a silicon wire grid polarizer and methods of making and using from the source record
Cited by the applicant
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Light emitting diode with nanostructured layer and methods of making and using from the source record
Cited by the applicant
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Film deposition apparatus for fine pattern forming from the source record
Cited by the examiner during prosecution
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Film deposition apparatus for fine pattern forming from the source record
Cited by the examiner during prosecution
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Film deposition apparatus for fine pattern forming from the source record
Cited by the examiner during prosecution
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Film deposition apparatus for fine pattern forming from the source record
Cited by the applicant
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Method for manufacturing printing plate from the source record
Cited by the examiner during prosecution
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Method for manufacturing printing plate from the source record
Cited by the applicant
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Method for manufacturing printing plate from the source record
Cited by the examiner during prosecution
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Method for manufacturing printing plate from the source record
Cited by the examiner during prosecution
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A polarizer based on a nanowire grid from the source record
Cited by the examiner during prosecution
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Polarizer based on a nanowire grid from the source record
Cited by the applicant
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Method of formation of coherent wavy nanostructures (variants) from the source record
Cited by the applicant
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Ion beam method for removing an organic light emitting material from the source record
Cited by the examiner during prosecution
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Ion beam method for removing an organic light emitting material from the source record
Cited by the applicant
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Metal wiring and method of manufacturing the same, and metal wiring substrate and method of manufacturing the same from the source record
Cited by the applicant
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Metal wiring and method of manufacturing the same, and metal wiring substrate and method of manufacturing the same from the source record
Cited by the applicant
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Metal wiring and method of manufacturing the same, and metal wiring substrate and method of manufacturing the same from the source record
Cited by the examiner during prosecution
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Metal wiring and method of manufacturing the same, and metal wiring substrate and method of manufacturing the same from the source record
Cited by the applicant
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Metal wiring and method of manufacturing the same, and metal wiring substrate and method of manufacturing the same from the source record
Cited by the applicant
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Metal Wiring and Method of Manufacturing the Same, and Metal Wiring Substrate and Method of Manufacturing the Same from the source record
Cited by the examiner during prosecution
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Metal wiring and method of manufacturing the same, and metal wiring substrate and method of manufacturing the same from the source record
Cited by the applicant
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Method of manufacturing metal wiring and method of manufacturing semiconductor device from the source record
Cited by the applicant
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Dry etching apparatus, etching method, and method of forming a wiring from the source record
Cited by the examiner during prosecution
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Dry etching apparatus, etching method, and method of forming a wiring from the source record
Cited by the examiner during prosecution
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Semiconductor device and manufacturing method thereof from the source record
Cited by the examiner during prosecution
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Semiconductor device and manufacturing method thereof from the source record
Cited by the examiner during prosecution
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Semiconductor device and manufacturing method thereof from the source record
Cited by the applicant
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Semiconductor device and manufacturing method thereof from the source record
Cited by the applicant
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Wiring and manufacturing method thereof, semiconductor device comprising said wiring, and dry etching method from the source record
Cited by the applicant
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Wiring and manufacturing method thereof, semiconductor device comprising said wiring, and dry etching method from the source record
Cited by the examiner during prosecution
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Wiring and manufacturing method thereof, semiconductor device comprising said wiring, and dry etching method from the source record
Cited by the applicant
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Wiring and manufacturing method thereof, semiconductor device comprising said wiring, and dry etching method from the source record
Cited by the applicant
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Wiring and manufacturing method thereof, semiconductor device comprising said wiring, and dry etching method from the source record
Cited by the examiner during prosecution
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Method for depositing a diffusion barrier layer and a metal conductive layer from the source record
Cited by the applicant
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Method of depositing a metal seed layer on semiconductor substrates from the source record
Cited by the applicant
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Method of depositing a metal seed layer on semiconductor substrates from the source record
Cited by the examiner during prosecution
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Damage-free sculptured coating deposition from the source record
Cited by the examiner during prosecution
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Method of depositing a metal seed layer on semiconductor substrates from the source record
Cited by the examiner during prosecution
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Method of depositing a metal seed layer on semiconductor substrates from the source record
Cited by the applicant
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Metal / metal nitride barrier layer for semiconductor device applications from the source record
Cited by the applicant
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Plasma etch reactor and method for emerging films from the source record
Cited by the applicant
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Plasma etch reactor and method from the source record
Cited by the examiner during prosecution
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Plasma etch reactor and method from the source record
Cited by the applicant
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Plasma etch reactor and method from the source record
Cited by the applicant
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Plasma etch reactor and method from the source record
Cited by the applicant
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Plasma etch reactor and method for emerging films from the source record
Cited by the applicant
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Apparatus for filling apertures in a film layer on a semiconductor substrate from the source record
Cited by the examiner during prosecution
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Integrated PVD system for aluminum hole filling using ionized metal adhesion layer from the source record
Cited by the applicant
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Method for low thermal budget metal filling and planarization of contacts vias and trenches from the source record
Cited by the applicant
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Filling narrow apertures and forming interconnects with a metal utilizing a crystallographically oriented liner layer from the source record
Cited by the applicant
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Processes depending on plasma generation from the source record
Cited by the examiner during prosecution
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Apparatus for processing semiconductor wafers or the like from the source record
Cited by the examiner during prosecution
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Apparatus and method for plasma treatment of resin material from the source record
Cited by the examiner during prosecution
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Film deposition apparatus for fine pattern forming from the source record
Cited by the examiner during prosecution
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Nanowire grid polarizer on a curved surface and methods of making and using from the source record
Cited by the applicant
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Wavelike hard nanomask on a topographic feature and methods of making and using from the source record
Cited by the applicant
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Optical memory devices using a silicon wire grid polarizer and methods of making and using from the source record
Cited by the applicant
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Arrangements with pyramidal features having at least one nanostructured surface and methods of making and using from the source record
Cited by the applicant
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Polarizer based on a nanowire grid from the source record
Cited by the applicant
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Light emitting diode with nanostructured layer and methods of making and using from the source record
Cited by the applicant
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SERS-sensor with nanostructured layer and methods of making and using from the source record
Cited by the applicant
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SERS-sensor with nanostructured surface and methods of making and using from the source record
Cited by the applicant
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Solar cell with nanostructured layer and methods of making and using from the source record
Cited by the applicant
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Fluid capture of nanoparticles from the source record
Cited by the examiner during prosecution
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Method of formation of coherent wavy nanostructures (variants) from the source record
Cited by the applicant
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Plasma Processor Apparatus from the source record
Cited by the examiner during prosecution
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Method of depositing a tantalum nitride/tantalum diffusion barrier layer system from the source record
Cited by the applicant
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Method for manufacturing printing plate from the source record
Cited by the examiner during prosecution
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Polarizer based on a nanowire grid from the source record
Cited by the examiner during prosecution
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Wiring and manufacturing method thereof, semiconductor device comprising said wiring, and dry etching method from the source record
Cited by the examiner during prosecution
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Method of depositing a diffusion barrier layer and a metal conductive layer from the source record
Cited by the examiner during prosecution
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Ion beam method for removing an organic light emitting material from the source record
Cited by the examiner during prosecution
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Atmospheric pressure plasma assembly from the source record
Cited by the examiner during prosecution
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Bonded substrate structures and method for fabricating bonded substrate structures from the source record
Cited by the examiner during prosecution
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Method and device for generating a plasma from the source record
Cited by the examiner during prosecution
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Metal wiring and method of manufacturing the same, and metal wiring substrate and method of manufacturing the same from the source record
Cited by the examiner during prosecution
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Method and apparatus for etching a semiconductor wafer with features having vertical sidewalls from the source record
Cited by the applicant
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Dry etching apparatus, etching method, and method of forming a wiring from the source record
Cited by the examiner during prosecution
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Plasma etch reactor having a plurality of magnets from the source record
Cited by the applicant
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Semiconductor device and manufacturing method thereof from the source record
Cited by the examiner during prosecution
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Method and apparatus for etching a semiconductor wafer with features having vertical sidewalls from the source record
Cited by the examiner during prosecution
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Plasma processing system from the source record
Cited by the examiner during prosecution
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Plasma etch reactor and method for emerging films from the source record
Cited by the examiner during prosecution
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Aluminum hole filling method using ionized metal adhesion layer from the source record
Cited by the examiner during prosecution
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Semiconductor device having a low thermal budget metal filling and planarization of contacts, vias and trenches from the source record
Cited by the examiner during prosecution
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Method and apparatus for producing variable spatial frequency control in plasma assisted chemical etching from the source record
Cited by the examiner during prosecution
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Method of and apparatus for synthesizing hard material from the source record
Cited by the examiner during prosecution
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Method for reducing foreign matter on a wafer etched in a reactive ion etching process from the source record
Cited by the examiner during prosecution
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Methods and apparatus for generating a plasma for "downstream" rapid shaping of surfaces of substrates and films from the source record
Cited by the examiner during prosecution
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Atomspheric plasma reaction method and apparatus therefor from the source record
Cited by the examiner during prosecution
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Process for the surface treatment of conductive material from the source record
Cited by the examiner during prosecution
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Electronic component having improved low resistance contact and manufacturing method therefor from the source record
Cited by the examiner during prosecution
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Magnetically enhanced RIE process and apparatus from the source record
Cited by the examiner during prosecution
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Processes depending on plasma generation using a helical resonator from the source record
Cited by the examiner during prosecution
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Ion etching and chemical vapour deposition from the source record
Cited by the examiner during prosecution
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Method of manufacturing a semiconductor device, in which photoresist on a silicon oxide layer on a semiconductor substrate is stripped from the source record
Cited by the examiner during prosecution
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Discharge reaction apparatus utilizing dynamic magnetic field from the source record
Cited by the examiner during prosecution
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Apparatus and method for plasma treatment of resin material from the source record
Cited by the examiner during prosecution
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Controlled process for the production of thermal energy from gases and apparatus useful therefor from the source record
Cited by the examiner during prosecution
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Plasma processing method and apparatus for carrying out the same from the source record
Cited by the examiner during prosecution
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Electron cyclotron resonance plasma source from the source record
Cited by the examiner during prosecution
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Dry etching patterning of electrical and optical materials from the source record
Cited by the examiner during prosecution
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High frequency plasma generation apparatus from the source record
Cited by the examiner during prosecution
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Apparatus and method for plasma treatment of resin material from the source record
Cited by the examiner during prosecution
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Neutral particle surface alteration from the source record
Cited by the examiner during prosecution
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Uniform plasma for drill smear removal reactor from the source record
Cited by the examiner during prosecution
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DEVICE FOR PROCESSING SEMICONDUCTOR BOARDS OR THE LIKE from the source record
Cited by the examiner during prosecution
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Plasma reactor apparatus and method from the source record
Cited by the examiner during prosecution
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Ion shower apparatus from the source record
Cited by the examiner during prosecution
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Plasma etching process and apparatus from the source record
Cited by the examiner during prosecution
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Apparatus for the etching for semiconductor devices from the source record
Cited by the examiner during prosecution
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Selective plasma polysilicon etching from the source record
Cited by the examiner during prosecution
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Method and apparatus for plasma etching from the source record
Cited by the examiner during prosecution
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Methods and apparatus for improving an RF excited reactive gas plasma from the source record
Cited by the examiner during prosecution
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Device for chemical dry etching of integrated circuits from the source record
Cited by the examiner during prosecution
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Controlled Process For The Production Of Thermal Energy From Gases And Apparatus Useful Therefore from the source record
Cited by the examiner during prosecution
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Process And Apparatus For The Production Of Fuel Gas And The Enhanced Release Of Thermal Energy From Such Gas found in the text
“…American, July, 1987, page 84]. Further processes are also described in United States patents 4,233,109; 4,406,765; 4,687,753 and 4,695,357. The process and apparatus described herein are…”
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Process & Apparatus For The Production Of Fuel Gas & The Enhanced Release Of Thermal Energy From Such Gas found in the text
“…Scientific American, July, 1987, page 84]. Further processes are also described in U.S. Pat. Nos. 4,233,109; 4,406,765; 4,687,753 and 4,695,357. The process and apparatus described herein are…”
References
cites 2
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Gas-etching device from the source record
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Film deposition from the source record