patent · US5221425A
Method for reducing foreign matter on a wafer etched in a reactive ion etching process
22 June 1993
Indexed reference — no copy held
This patent is cited by material in the archive, so it is indexed here by number, title and inventor. The archive holds no copy of its text.
Provenance
- Collection
- Patents citing this work
- Patent office record
- patents.google.com →
- Source
- Google Patents citing-documents table
- Assignee
- International Business Machines Corporation
- Published
- 1993-06-22