patent · US6569704
Group III-V semiconductor light emitting devices with reduced piezoelectric fields and increased efficiency
27 May 2003
Indexed reference — no copy held
This patent is cited by material in the archive, so it is indexed here by number, title and inventor. The archive holds no copy of its text.
Abstract
An optical semiconductor device having a plurality of GaN-based semiconductor layers containing a strained quantum well layer in which the strained quantum well layer has a piezoelectric field that depends on the orientation of the strained quantum well layer when the quantum layer is grown. In the present invention, the strained quantum well layer is grown with an orientation at which the piezoelectric field is less than the maximum value of the piezoelectric field strength...
Provenance
- Collection
- Cited prior art
- Original PDF
- patentimages.storage.googleapis.com →
- Filed
- 2000-11-21
- Source
- Google Patents bibliographic record
- Granted
- 2003-05-27
- Inventors
- Tetsuya Takeuchi; Norihide Yamada; Hiroshi Amano; Isamu Akasaki; Lumileds LLC